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Press Release

US Patent Office - Delays In Getting Technology Protection

Mequon, WI, January 4, 2010 - Telaric Ideas releases its annual tabulation of the time it takes to get a patent.

Patents in 2009 taking the longest time to be approved for the state of Id.


7510961 Patent Date:Mar. 31, 2009 12.1 Years to be approved
Title: Utilization of energy absorbing layer to improve metal flow and fill in a novel interconnect structure
Inventor(s): John H. Givens, Meridian, Id. (US)
Assignee: Micron Technology, Inc., Boise, Id. (US)
 
7485587 Patent Date:Feb. 03, 2009 11.1 Years to be approved
Title: Method of making a semiconductor device having improved contacts
Inventor(s): Howard E. Rhodes, Boise, Id. (US)
Assignee: Micron Technology, Inc., Boise, Id. (US)
 
7592898 Patent Date:Sep. 22, 2009 10.5 Years to be approved
Title: Wireless communication systems, interrogators and methods of communicating within a wireless communication system
Inventor(s): David K. Ovard, Meridian, Id. (US); and Roy Greeff, Boise, Id. (US)
Assignee: Keystone Technology Solutions, LLC, Boise, Id. (US)
 
7552090 Patent Date:Jun. 23, 2009 9.9 Years to be approved
Title: Method for billing for services delivered over a computer network
Inventor(s): Timothy P. Barber, San Diego, Calif. (US)
Assignee: Keynetics Inc., Boise, Id. (US)
 
7635079 Patent Date:Dec. 22, 2009 9.6 Years to be approved
Title: System for locating conductive sphere utilizing screen and hopper of solder balls
Inventor(s): Chad A. Cobbley, Boise, Id. (US); Michael B. Ball, Boise, Id. (US); and Marjorie L. Waddel, Boise, Id. (US)
Assignee: Micron Technology, Inc., Boise, Id. (US)
 
7580887 Patent Date:Aug. 25, 2009 9.3 Years to be approved
Title: Method and apparatus for facilitating purchase transactions across a network
Inventor(s): John E. Geering, Nampa, Id. (US)
Assignee: Micron Technology, Inc., Boise, Id. (US)
 
7576400 Patent Date:Aug. 18, 2009 9.3 Years to be approved
Title: Circuitry and gate stacks
Inventor(s): Zhiping Yin, Boise, Id. (US); Ravi Iyer, Boise, Id. (US); Thomas R. Glass, Idaho City, Id. (US); Richard Holscher, Boise, Id. (US); Ardavan Niroomand, Boise, Id. (US); Linda K. Somerville, Boise, Id. (US); and Gurtej S. Sandhu, Boise, Id. (US)
Assignee: Micron Technology, Inc., Boise, Id. (US)
 
7530877 Patent Date:5/12/2009 9.2 Years to be approved
Title: Semiconductor processor systems, a system configured to provide a semiconductor workpiece process fluid
Inventor(s): Scott E. Moore, Meridian, Id. (US); Scott G. Meikle, Gainesville, Va. (US); and Magdel Crum, Portland, Oreg. (US)
Assignee: Micron Technology, Inc., Boise, Id. (US)
 
7547579 Patent Date:Jun. 16, 2009 9.2 Years to be approved
Title: Underfill process
Inventor(s): Tongbi Jiang, Boise, Id. (US)
Assignee: Micron Technology, Inc., Boise, Id. (US)
 
7557452 Patent Date:Jul. 07, 2009 9.1 Years to be approved
Title: Reinforced, self-aligning conductive structures for semiconductor device components and methods for fabricating same
Inventor(s): Vernon M. Williams, Meridian, Id. (US); Ford B. Grigg, Meridian, Id. (US); and Bret K. Street, Meridian, Id. (US)
Assignee: Micron Technology, Inc., Boise, Id. (US)
 
7492086 Patent Date:Feb. 17, 2009 9.1 Years to be approved
Title: Low work function emitters and method for production of FED's
Inventor(s): David A. Cathey, Boise, Id. (US); Surjit S. Chadha, Meridian, Id. (US); and Behnam Moradi, Boise, Id. (US)
Assignee: Micron Technology, Inc., Boise, Id. (US)
 
7560815 Patent Date:Jul. 14, 2009 9.1 Years to be approved
Title: Device structures including ruthenium silicide diffusion barrier layers
Inventor(s): Brian A. Vaartstra, Nampa, Id. (US); and Eugene P. Marsh, Boise, Id. (US)
Assignee: Micron Technology, Inc., Boise, Id. (US)
 
7605934 Patent Date:Oct. 20, 2009 8.5 Years to be approved
Title: Method and system for facsimile delivery using dial-up modem pools
Inventor(s): Doug Rollins, Nampa, Id. (US)
Assignee: Micron Technology, Inc., Boise, Id. (US)
 
7570504 Patent Date:Aug. 04, 2009 8.4 Years to be approved
Title: Device and method to reduce wordline RC time constant in semiconductor memory devices
Inventor(s): Huy Thanh Vo, Boise, Id. (US)
Assignee: Micron Technology, Inc., Boise, Id. (US)
 
7489790 Patent Date:Feb. 10, 2009 8.2 Years to be approved
Title: Digital automatic gain control
Inventor(s): Jon Schmidt Kindred, Minneapolis, Minn. (US); Bryant Sorensen, Colorado Springs, Colo. (US); and Jerry Wahl, Woodland Park, Colo. (US)
Assignee: AMI Semiconductor, Inc., Pocatello, Id. (US)
 
7526795 Patent Date:Apr. 28, 2009 8.1 Years to be approved
Title: Data security for digital data storage
Inventor(s): Doug L. Rollins, Nampa, Id. (US)
Assignee: Micron Technology, Inc., Boise, Id. (US)
 
7629630 Patent Date:Dec. 08, 2009 8.1 Years to be approved
Title: Electropolished patterned metal layer for semiconductor devices
Inventor(s): Richard H. Lane, Boise, Id. (US)
Assignee: Micron Technology, Inc., Boise, Id. (US)
 
7631170 Patent Date:Dec. 08, 2009 7.8 Years to be approved
Title: Program controlled embedded-DRAM-DSP having improved instruction set architecture
Inventor(s): Eric M. Dowling, Richardson, Tex. (US)
Assignee: Micron Technology, Inc., Boise, Id. (US)
 
7549011 Patent Date:Jun. 16, 2009 7.8 Years to be approved
Title: Bit inversion in memory devices
Inventor(s): Anthony Moschopoulos, San Jose, Calif. (US)
Assignee: Micron Technology, Inc., Boise, Id. (US)
 
7518223 Patent Date:Apr. 14, 2009 7.6 Years to be approved
Title: Semiconductor devices and semiconductor device assemblies including a nonconfluent spacer layer
Inventor(s): James M. Derderian, Boise, Id. (US)
Assignee: Micron Technology, Inc., Boise, Id. (US)
 
7558390 Patent Date:Jul. 07, 2009 7.6 Years to be approved
Title: Listening device
Inventor(s): Jakob Nielsen, Waterloo (Canada); Robert Brennan, Kitchener (Canada); and Todd Schneider, Waterloo (Canada)
Assignee: AMI Semiconductor, Inc., Pocatello, Id. (US)
 
7477556 Patent Date:Jan. 13, 2009 7.5 Years to be approved
Title: 256 Meg dynamic random access memory
Inventor(s): Brent Keeth, Boise, Id. (US); Layne G. Bunker, Boise, Id. (US); Raymond J. Beffa, Boise, Id. (US); and Frank F. Ross, Boise, Id. (US)
Assignee: Micron Technology, Inc., Boise, Id. (US)
 
7497005 Patent Date:Mar. 03, 2009 7.5 Years to be approved
Title: Method for forming an inductor
Inventor(s): Leonard Forbes, Corvallis, Oreg. (US); and Kie Y. Ahn, Chappaqua, N.Y. (US)
Assignee: Micron Technology, Inc., Boise, Id. (US)
 
7589029 Patent Date:Sep. 15, 2009 7.4 Years to be approved
Title: Atomic layer deposition and conversion
Inventor(s): Garo J. Derderian, Boise, Id. (US); and Gurtej Singh Sandhu, Boise, Id. (US)
Assignee: Micron Technology, Inc., Boise, Id. (US)
 
7634624 Patent Date:Dec. 15, 2009 7.2 Years to be approved
Title: Memory system for data storage and retrieval
Inventor(s): Sergey Anatolievich Gorobets, Edinburgh (United Kingdom)
Assignee: Micron Technology, Inc., Boise, Id. (US)
 
 

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